Перегляд за автором "Valakh, M.Ya."

Сортувати за: Порядок: Результатів:

  • Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study 
    Strelchuk, V.V.; Kladko, V.P.; Yefanov, O.M.; Kolomys, O.F.; Gudymenko, O.I.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid ...
  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy 
    Ponomaryov, S.S.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local ...
  • Efficient core-SiO₂/shell-Au nanostructures for surface enhanced Raman scattering 
    Yukhymchuk, V.O.; Hreshchuk, O.M.; Valakh, M.Ya.; Skoryk, M.A.; Efanov, V.S.; Matveevskaya, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The efficient SERS (surface enhanced Raman scattering) substrates that are films of nanoparticles (NP) of the “core–shell” type, where the core of SiO2, and the shell of gold nanoparticles, were developed in this work. ...
  • Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies 
    Strelchuk, V.V.; Bryksa, V.P.; Avramenko, K.A.; Lytvyn, P.M.; Valakh, M.Ya.; Pashchenko, V.O.; Bludov, O.M.; Deparis, C.; Morhain, C.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...
  • Influence of the dispersion medium on the properties of CdTe micro- and nanocrystals in a colloidal solution 
    Kapush, O.; Budzulyak, S.I.; Korbutyak, D.V.; Vakhnyak, N.D.; Boruk, S.D.; Dzhagan, V.M.; Yemets, A.I.; Valakh, M.Ya. (Functional Materials, 2019)
    Surface and optical properties of CdTe nanoparticles obtained by grinding (40-150 nm, microcrystals) and colloidal synthesis (1-4 nm, nanocrystals) methods are investigated. It is shown that the most intensive adsorption ...
  • Investigation of electron-phonon interaction in bulk and nanostructured semiconductors 
    Yaremko, A.M.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Azhniuk, Yu.M.; Baran, J.; Ratajczak, H.; Drozd, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be ...
  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Multimodal size distribution of Si nanoclusters in SiO₂ as manifestation of interaction in the space of sizes 
    Blonskiy, I.V.; Lev, B.I.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    This paper summarizes the results of experimental studies revealing a multimodal character of the function of size distribution of Si nanoclusters in light-emitting SiO₂:Si structures. To explain the nature of this ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T. ; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape ...
  • Optical investigations of thermostimulated changes in an ensemble of CdSxSe₁₋x quantum dots embedded into borosilicate glass matrix 
    Kunets, V.P.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the ...
  • Properties of SiGe/Si heterostructures fabricated by ion implantation technique 
    Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...
  • Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G .; Rudko, G.Yu.; Valakh, M.Ya.; Malyarchuk, V.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) study of pseudomorphic heavily modulation-doped AlxGa₁₋xAs/InyGa₁-yAs/GaAs heterostructures shows fundamental changes in the PL spectrum under excitation pumping and/or temperature increase. In most ...
  • Raman and ESR study of gas detonation deposited hydroxyapatite coatings 
    Dzhagan, V.M.; Valakh, M.Ya.; Konchits, A.A.; Vorona, I.P.; Yefanov, V.S.; Klyui, M.I.; Temchenko, V.P.; Dubok, V.A. (Functional Materials, 2009)
    Structural modification of hydroxyapatite (HAP) formed by gas detonation HAP deposition on metal substrates has been studied using Raman spectroscopy and electron spin resonance (ESR) techniques. It was revealed, that the ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...